Structure for temperature sensors and infrared detectors in the form of thermal detectors.

专利摘要:
Structure of temperature sensors and infrared detectors in the form of thermal detectors built on a substrate (2) comprising- (3), comprising and comprising an electrical contact layer (3), the layer resistance is intended to be measured, and a thermistor layer whose resistance is temperature-dependent (4, 5) on both sides of the thermistor layer between which contacts - where the thermistor layer (3) consists of a monocrystalline quantum well structure comprising alternating quantum well layers and barrier layers, thereon consisting of a disk of silicon, where the quantum well SiGe, consists of undoped or low doped Si silicon. and where between the substrate (2) the layers consist of silicon germanium, and where the barrier layer-both said contact layer (4,5) and the thermistor layer (3) precede (9,9) filling the quantum wells in ter- there is a buffer layer of silicon, Si, The invention is characterized in that the contact layers (4,5) are p-doped and in that the quantum well structure is n-doped or undoped, and in that buffer buffer ikten are n-doped.
公开号:SE1150478A1
申请号:SE1150478
申请日:2011-05-23
公开日:2012-03-06
发明作者:Per Ericsson
申请人:Acreo Ab；
IPC主号:

专利说明:

1015202530an IR bolometer, there is an absolute upper limit for structuralclean thickness. A combination of relatively low resistivityand the requirement for maximum thickness means that the component receives oneresistance, which is lower than desirable.
When the quantum wells are p-doped and the buffer layers are undopedor low doped, the resistance decreases relatively little when β-dopedthe increase in the buffer layers increases.
The present invention solves said low resistance problem.and offers a structure with a higher and selectable resistanceactivity.
The present invention thus relates to a structurefor temperature sensors and infrared detectors in the form ofchemical detectors built on a substrate comprising athermistor layer, the resistance of which is temperature dependent andincluding an electrical contact layer on both sides ofthe thermistor layer, between which contact layers the resistance isintended to be measured, where the thermistor layer consists of a mono-crystalline quantum well structure comprising varying quantumwell layer and barrier layer, where the substrate consists of asheet of silicon, where the quantum well layers consist of siliconnium, SiGe, and where the barrier layers consist of odopate orlow doped silicon, Si, and there between both said contact layersand the thermistor layer there is a buffer layer of silicon, Si,arranged to prevent the contact layers from overfilling the quantumin the thermistor layer and is characterized by the contact layersare p-doped and because the quantum well structure is n-doped orundoped, and by the fact that the buffer layers are n-doped.
The invention is described in more detail below, partly in connection with onattached drawing showed exemplary embodiments, whereH: DOCWORK Applicationtext.docx, 201 1-05 -231015202530figure 1 shows a structure according to the inventionfigure 2 shows a diagram of resistance, as a functionof degree of doping and thickness of buffer layer.
By quantum well layer is meant thin layers of semiconductors, so-calledquantum well layers, in which charge carriers have lower energy thanin surrounding layers, s.k. barrier layer. Quantum well layer andbarrier layers are both single-crystalline and lattice-adaptedeach other. When the quantum well layers are thin, the energy quantumto occur, which affects the permissible energy levels ofthe charge carriers.
For thermistor material of the quantum well type, it generally applies thatdetector temperature coefficient B = Ea / kT2, where Ea is activevering energy and where k is Boltzmann's constant and where T isthe temperature.
The activation energy depends on the energy difference between the valencethe bands in the barrier and the permissible energy levels inthe well. The energy difference is controlled by baptism level, thickness ofthe well and the height of the energy barrier, which closes holes inthe well. The wider the well and the lower the baptismal level, the higheractivation energy is obtained, which leads to a higher temperatureratur coefficient. The higher the barrier, the higher the activationenergy is obtained.Figure 1 shows a structure 1 for temperature sensors andred detectors built on a substrate 2 comprising athermistor layer 3, the resistance of which is temperature dependent andcomprising an electrical contact layer 4,5 on both sidesabout the thermistor layer 3, between which contact layers the resistanceis intended to be measured. Reference numerals 10,11 denote electricallyrisky leaders.
H: DOCWORK Applicationtext.docx, 201 1-05 -231015202530Between both said contact layers 4,5 and the thermistor layer 3buffer layers 8,9 are arranged to prevent the contact layers 4,5 to overfill the quantum wells in the thermistor layer 3.
The thermistor layer 3 consists of a monocrystalline quantum well source.structure comprising alternating quantum well layers and barrierarskikt. The substrate 2 consists of a disk of silicon.
In the thermistor layer 3, the quantum well layers consist of silicanium, SiGe, and the barrier layers of odopated or low dopedsel, Si.
According to the present invention, the contact layers are 4.5 β-dopa-the. Furthermore, the quantum well structure is n-doped or undoped andthe buffer layers are n-doped.
The inventor was previously convinced that the buffer layerswould be p-type undoped or low doped and that quantumthe wells would be p-doped. It was therefore surprisingthat it was possible that the quantum wells could be n-dopedor undoped while the buffer layers could be n-dopedpade.
It was also surprising that with n-doped quantum wellsit is possible to get a higher and controllable resistance overthe structure ån if the quantum wells are p-doped. N-type doping inboth buffer layers and quantum wells thus provide a greatability to optimize a structure with respect to bothwhiteness and thickness of the structure.
Figure 2 shows as an example the resistance of a thermistor withdimension 25X25 square micrometers as a function of dopingH: DOCWORK Applicationtext.docx, 201 1-05 -231015202530degree and thickness of each of the two buffer layers 8.9. INFigure 2 thus shows four curves for buffer layers with thick150 nanometers and 200toys 50 nanometers, 100 nanometers,nanometer.
The X-axis indicates the degree of doping (atoms / cmê) and the y-axis indicatesis given the resistance across the structure l in Ohm. On the x-axis means"-1E + 17" flxio "and" 2E + 17 "zxio".
As can be seen, a doping of the p-type gives, which is thus another yeargains about the line "0", a resistance which is significantly lowerån when doping years of n-type. Furthermore, it appears that the resistanceincreases faster for a certain degree of doping the thicker the bufferlayer years.
By choosing a combination of thickness of the buffer layers8.9 and the degree of doping in those years, thus the resistancebar within a large area.
According to a preferred embodiment, the contact layers are 4.5 p-doped, the quantum well structure n-doped and the buffer layers 8.9n-doped.
According to another preferred embodiment, the resistance is overstructure 1 selected by the degree of doping of the quantum well ski3 and the buffer layers 8.9 years selected at a selected thickness ofthe quantum well structure and the buffer layers.
It is further preferred that the doping of the buffer layersexceeds lxlOM cnfï but is less than 2xl0N cm%.
In addition, it is preferred that the doping of quantum well layers3 3ten exceeds lxl0M cm-, but falls below 2xl0U cm_.
H: DOCWORK Applicationtext.docx, 201 1-05 -23101520Furthermore, it is preferred that the combination of the totalthe thickness (t) of the quantum well structure 3 and the buffer layers8.9 and the degree of doping gives a resistance over the structure 1,exceeding 30 kOmh.
According to a preferred embodiment, the thermistor layer 3 has anumber of quantum well layers less than 20.
It is obvious that the present invention means thatstructure 1 can be optimized with respect to resistivity andthickness within wide limits.
A number of embodiments have been given above. The inventionmay, however, vary with respect to other degrees of doping andthicknesses than those shown in Figure 2.
The present invention should therefore not be construed as limitedto the above embodiments but can be varied withinits framework specified by the appended claims.
H: DOCWORK Applicationtext.docx, 201 1-05 -23

权利要求:
Claims (7)
[1]
Structure of temperature sensors and infrared detectors in the form of thermal detectors built on a substrate (2) in- (3), turn-dependent and comprising an electrical contact layer (4, (3), the roof layer resistance is intended to be fed, comprising a thermistor layer whose resistance is temperature 5) on both sides of the thermistor layer between which the thermistor layer (3) consists of a monocrystalline quantum well structure including alternating quantum well layers and barrier layers, where the substrate (2) consists of a sheet of silicon, where the quantum well layers consists of silicon germanium, SiGe, and where the barrier layers consist of undoped or low doped silicon, Si, and where between (4,5) (8,9) both said contact layers and the thermistor layer (3) there is a buffer layer (4,5 ) of silicon, Si, arranged to prevent the contact layers (3), are p-doped and of the quantum well structure being to overfill the quantum wells in the thermistor layer to contact (4,5) can be drawn, the layers n-doped or odop ad, and that the buffer layers are n-doped.
[2]
Structure according to claim 1, in that (4,5) k a n n e t e c k n a d a v, the contact layers are p-doped and in that the quantum well structure is n-doped, and in that the buffer layers are n-doped.
[3]
Structure according to claim 1 or 2, characterized in that the resistance over the structure is selected by the degree of doping of the quantum well shit and the buffer layers being selected at a selected thickness of the quantum well structure and the buffer layers.
[4]
Structure according to claim 1, 2 or 3, characterized in that the doping of the buffer layers exceeds 1x10m cm * Ä but is less than 2x10 cm%. H: DOCWORK Applicationtext.docx, 201 1-05 -23 10 15
[5]
Structure according to claim 1, 2, 3 or 4, characterized in that the doping of the quantum well layers exceeds 1x10 2 cm%, but falls below 2x10 cm%.
[6]
Structure according to claim 1, 2, 3, 4 or 5, characterized in that the combination of the total thickness (t) of the quantum well structure and the buffer layers and the degree of doping gives a resistance over the structure exceeding 30 kOmh.
[7]
Structure according to claim 1, 2, 3, 4, 5 or 6, characterized in that the thermistor layer (3) has a number of quantum well layers which are less than 20. H: DOCWORK Application text.docx, 201 1-05 -23

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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SE533025C2|2008-06-25|2010-06-08|Acreo Ab|Structures for temperature sensors and infrared detectors|

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SE533944C2|2008-12-19|2011-03-08|Henry H Radamson|A multi-layered structure|GB2520032A|2013-11-06|2015-05-13|Univ Warwick|Bolometer|

法律状态:

优先权:

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申请号 | 申请日 | 专利标题

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SE1150478A|SE534976C2|2011-05-23|2011-05-23|Structure for temperature sensors and infrared detectors in the form of thermal detectors.|SE1150478A| SE534976C2|2011-05-23|2011-05-23|Structure for temperature sensors and infrared detectors in the form of thermal detectors.|

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EP11190315.9A| EP2528111A3|2011-05-23|2011-11-23|Structure for temperature sensors and infrared detectors in the form of thermal detectors|